HGTG30N60A4D
Manufacturer:
On Semiconductor
Mfr.Part #:
HGTG30N60A4D
Datasheet:
Description:
IGBTs TO-247-3 Through Hole Single 600 V 463 W 75 A
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 600 V |
| Length | 15.87 mm |
| Width | 4.82 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 20.82 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Current Rating | 30 A |
| Lifecycle Status | NRND (Last Updated: 2 months ago) |
| Max Power Dissipation | 463 W |
| Power Dissipation | 463 W |
| Max Collector Current | 75 A |
| Collector Emitter Breakdown Voltage | 600 V |
| Turn-On Delay Time | 25 ns |
| Turn-Off Delay Time | 150 ns |
| Reverse Recovery Time | 55 ns |
| Continuous Collector Current | 75 A |
| Element Configuration | Single |
| Rise Time | 12 s |
| Collector Emitter Voltage (VCEO) | 600 V |
| Collector Emitter Saturation Voltage | 1.8 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 months ago) |
| Maximum Gate Emitter Voltage | 20 V |
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